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This topic is about the field and the logic gate and it's the notes i written it myself I'm study it
Typology: Study notes
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Apparatus required-
volts. (^) Now change the^ drain^ source^ voltage
(Vos) from 0 volt^ upwards^ in^ steps^
of convenient^ value^ (say^ I^ volt)^ up^ to^16 volts. Note down^ the^ value^ of drain^ current^ corresponding^
for different values^ of^ gate^ source^ voltage
Vos
the value^ of^ VDs at^ which^ the^ drain^ current^
becomes
constant. This^ is^ called^ the^ Pinch^ Off^ voltage.
VGs)
1-For Transfer^ characteristics,^ keep^ the^ source^
drain (^) voltage Vps^ at^ a^ value
greater than^ the^ pinch^ of^ f^ voltage^
as a recorded^ above(say^ Vps'^
change the^ gate^ source^ voltage^ Vos^
process till^ the^ drain^ current^
becomes zero.For^ transfer^ characteristics^ curve, drawn (^) graph between^ p and Vas.^ (as^ shown^
in (^) fig.4)
G 1
S
CIRCUIT DIAGRAM FG(1)
DRAIN DRATN
GATE
GATG n
SoUREE
-CRannel FET HG(2)
n- (^) Channel FET
(Tn mA)
Result
Volts The value^ of^ Pinch^ Off^ voltage^ V=
Precautions-
Source (^) voltage beyond^15 volts^ as^ high
voltage can^ damage^
FET is^ n-^ channel^ or^ p-^
channel device^ and
apply the^ gate^ source^
bias and^ drain^ source^ voltage^
accordingly.
the (^) gate source^ junction.
Important Points
The transfer^
characteristics of^ FET^ is^ a^ part^
of parabolic non^ linear^
curve so
value of^ g.yaries^ depending^
upon the^ location^
on the^ curve^. It^ has^ a^ greater
value near^ the^ top^ of^
bottom. Students^ should^
property from^ the^
transfer characteristics^
drawn from^ the^
observations.