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Types and Operation of Semiconductor Memory: Static RAM, Dynamic RAM, and ROM, Slides of Microprocessor and Assembly Language Programming

This document from docsity.com provides an in-depth explanation of the different types of semiconductor memory, including static ram (sram), dynamic ram (dram), and read only memory (rom). It covers the structure, operation, and advantages/disadvantages of each type, as well as details on refreshing, packaging, organization, error correction, and synchronous dram. Additionally, it introduces rambus as a main competitor to sdram.

Typology: Slides

2012/2013

Uploaded on 04/24/2013

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Chapter 5
Internal Memory
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Download Types and Operation of Semiconductor Memory: Static RAM, Dynamic RAM, and ROM and more Slides Microprocessor and Assembly Language Programming in PDF only on Docsity!

Chapter 5

Internal Memory

Semiconductor Memory Types

Memory Cell Operation

Dynamic RAM

  • Bits stored as charge in capacitors
  • Charges leak
  • Need refreshing even when powered
  • Simpler construction
  • Smaller per bit
  • Less expensive
  • Need refresh circuits
  • Slower
  • Main memory
  • Essentially analogue —Level of charge determines value Docsity.com

DRAM Operation

  • Address line active when bit read or written —Transistor switch closed (current flows)
  • Write —Voltage to bit line - High for 1 low for 0 —Then signal address line - Transfers charge to capacitor
  • Read —Address line selected - transistor turns on —Charge from capacitor fed via bit line to sense amplifier - Compares with reference value to determine 0 or 1 —Capacitor charge must be restored

Static RAM

  • Bits stored as on/off switches
  • No charges to leak
  • No refreshing needed when powered
  • More complex construction
  • Larger per bit
  • More expensive
  • Does not need refresh circuits
  • Faster
  • Cache
  • Digital —Uses flip-flops Docsity.com

Static RAM Operation

  • Transistor arrangement gives stable logic state
  • State 1 —C 1 high, C 2 low —T 1 T 4 off, T 2 T 3 on
  • State 0 —C 2 high, C 1 low —T 2 T 3 off, T 1 T 4 on
  • Address line transistors T 5 T 6 is switch
  • Write – apply value to B & compliment to B
  • Read – value is on line B

SRAM v DRAM

  • Both volatile —Power needed to preserve data
  • Dynamic cell —Simpler to build, smaller —More dense —Less expensive —Needs refresh —Larger memory units
  • Static —Faster —Cache

Types of ROM

  • Written during manufacture —Very expensive for small runs
  • Programmable (once) —PROM —Needs special equipment to program
  • Read ―mostly‖ —Erasable Programmable (EPROM) - Erased by UV (everything) —Electrically Erasable (EEPROM) (erase only the one that is needed) - Takes much longer to write than read —Flash memory (between EPROM and EEPROM) - Erase whole memory electrically Docsity.com

Organisation in detail

  • A 16Mbit chip can be organised as 1M of 16 bit words
  • A bit per chip system has 16 lots of 1Mbit chip with bit 1 of each word in chip 1 and so on
  • A 16Mbit chip can be organised as a 2048 x 2048 x 4bit array —Reduces number of address pins - Multiplex row address and column address - 11 pins to address (2^11 =2048) - Adding one more pin doubles range of values so x4 capacity

Typical 16 Mb DRAM (4M x 4)

Packaging

1M X 8 bit 4M X 4 bit

Module Organization (2)

MM size = 1 MB

Error Correction

  • Hard Failure —Permanent defect
  • Soft Error —Random, non-destructive —No permanent damage to memory
  • Detected using Hamming error correcting code