Docsity
Docsity

Prepare for your exams
Prepare for your exams

Study with the several resources on Docsity


Earn points to download
Earn points to download

Earn points by helping other students or get them with a premium plan


Guidelines and tips
Guidelines and tips

Semiconductor Theory: Fundamentals and Applications, Summaries of Electronic Circuits Analysis

A comprehensive introduction to semiconductor theory, covering fundamental concepts such as atomic structure, valence electrons, and types of semiconductors. It delves into the characteristics of intrinsic and extrinsic semiconductors, explaining the behavior of diodes under different bias conditions. The document also includes practical examples and exercises to reinforce understanding.

Typology: Summaries

2024/2025

Available from 03/09/2025

dana-6fn
dana-6fn 🇵🇭

1 document

1 / 10

Toggle sidebar

This page cannot be seen from the preview

Don't miss anything!

bg1
SEMICONDUCTOR THEORY
Semiconductor Materials (used most frequently)
1. Si (Silicon)
2. Ge (Germanium)
3. GaAs (Gallium Arsenide)
Semiconductor Materials have a negative
temperature coefficient.
Facts:
In 1947 germanium was used almost
exclusively because it was relatively easy
to find and was available in large
quantities.
Germanium was relatively easy to refine
to obtain very high purity levels.
“But it was discovered in the early years that
diodes and transistors constructed using
germanium as the base material suffered from
low levels of reliability due primarily to its sensitivity
to changes in temperature.”
In 1954 the first silicon transistor was
introduced, and silicon quickly became
the semiconductor material of choice.
Silicon is less temperature-sensitive.
“Silicon is one of the most abundant materials on
earth.”
In the 1970s GaAs transistors were
developed.
GaAs transistors are often used as the
base material for new high-speed.
Definition of Terms:
Electronics – studies the behavior of electrons.
Branch of physics and engineering that
deals with the study of electron behavior,
flow, and control.
Atom – smallest particle of an element
Atomic Mass or Weight the sum of protons and
neutrons in the nucleus of an atom.
Atomic Number number of electrons in an
electrically balanced or neutral atom.
Ionization the process of losing a valence
electron
Positive Ion positively charged atom; protons are
greater than electrons
Negative Ion – negatively charged atom; protons
are less than electrons
Semiconductor materials that are between
conductors and insulators in their ability to
conduct electrical current
intrinsic (pure)
neither a good conductor nor a good
insulator
Single-Element Semiconductor – tetravalent
Silicon – 2 8 – (4); crystalline material
Germanium – 2 8 – 18 – (4)
Conductor (metal) allows electricity to pass
through.
Less than 4 valence electrons
Insulator (non-metal) does not allow electricity
to pass through.
More than 4 valence electrons
Perfect Conductor consists of 1 valence
electrons.
________________________________________________
Energy Level
Insulator Energy Level – Eg > 5 eV
Conductor Energy Level – The bands overlap
Semiconductor Energy Level
Material
Diode
Energy Gap
Si
0.7 V
1.1 eV
Ge
0.3 V
6.7 eV
GaAs
1.2 V
1.41 eV
“The farther an electron is from the nucleus, the
higher is the energy state, and any electron that
has left its parent atom has a higher energy state
than any electron in the atomic structure.”
________________________________________________
Semiconductor Crystal Structure & Covalent
Bonding
Crystalline Structure atoms that are bound
together.
Crystal – atoms combined to form a solid material;
arranged in at fixed pattern.
pf3
pf4
pf5
pf8
pf9
pfa

Partial preview of the text

Download Semiconductor Theory: Fundamentals and Applications and more Summaries Electronic Circuits Analysis in PDF only on Docsity!

SEMICONDUCTOR THEORY

Semiconductor Materials ( used most frequently )

1. Si (Silicon) 2. Ge (Germanium) 3. GaAs (Gallium Arsenide) “ Semiconductor Materials have a negative temperature coefficient.Facts:

  • In 1947 germanium was used almost exclusively because it was relatively easy to find and was available in large quantities.
  • Germanium was relatively easy to refine to obtain very high purity levels. “But it was discovered in the early years that diodes and transistors constructed using germanium as the base material suffered from low levels of reliability due primarily to its sensitivity to changes in temperature.”
  • In 1954 the first silicon transistor was introduced, and silicon quickly became the semiconductor material of choice.
  • Silicon is less temperature-sensitive. “Silicon is one of the most abundant materials on earth.”
  • In the 1970s GaAs transistors were developed.
  • GaAs transistors are often used as the base material for new high-speed. Definition of Terms: Electronics – studies the behavior of electrons.
  • Branch of physics and engineering that deals with the study of electron behavior, flow, and control. Atom – smallest particle of an element Atomic Mass or Weight – the sum of protons and neutrons in the nucleus of an atom. Atomic Number – number of electrons in an electrically balanced or neutral atom. Ionization – the process of losing a valence electron Positive Ion – positively charged atom; protons are greater than electrons Negative Ion – negatively charged atom; protons are less than electrons Semiconductor – materials that are between conductors and insulators in their ability to conduct electrical current
  • intrinsic (pure)
  • neither a good conductor nor a good insulator Single-Element Semiconductor – tetravalent Silicon – 2 – 8 – (4); crystalline material Germanium – 2 – 8 – 18 – (4) Conductor ( metal ) – allows electricity to pass through.
  • Less than 4 valence electrons Insulator ( non-metal ) – does not allow electricity to pass through.
  • More than 4 valence electrons Perfect Conductor – consists of 1 valence electrons.

Energy Level Insulator Energy Level – Eg > 5 eV Conductor Energy Level – The bands overlap Semiconductor Energy Level Material Diode Energy Gap Si 0.7 V 1.1 eV Ge 0.3 V 6.7 eV GaAs 1.2 V 1.41 eV “The farther an electron is from the nucleus, the higher is the energy state, and any electron that has left its parent atom has a higher energy state than any electron in the atomic structure.”


Semiconductor Crystal Structure & Covalent Bonding Crystalline Structure – atoms that are bound together. Crystal – atoms combined to form a solid material; arranged in at fixed pattern.

Lattice Structure – neutrons and protons form the nucleus, and electrons appear in fixed orbits around the nucleus. Lattice ( geometric grid of points ) – periodic arrangements of the atoms. Valence Electrons – electrons in the outermost shell of an atom (last orbit) No. of Electron in a Shell = 2n^2 Trivalent – 3 valence electrons (at Ga) Tetravalent – 4 valence electrons Pentavalent – 5 valence electrons (at As) Valence – used to indicate that the potential required to remove… Valence Bond – bond in valence electrons located Conduction Bond – bond in which valence electrons can freely move Covalent Bonding – sharing of electrons; bonding of atoms Types of Semiconductors

1. Intrinsic Semiconductor - Carefully refined to reduce impurities to a very low level essentially as pure as can be made. - Pure semi-material Hole – vacancy left in the valence bond Electron-Hole Pair – breaking of covalent bond Recombination – when conduction bond electrons lose energy and fall back into the hole in the valence bond Lifetime – the amount of time between the creation and disappearance of a free electron Electron Flow – the movement of free electrons in one direction Free Electron – the flow of an electric circuit in a wire Hole Flow - the movement of the hole constitutes a current flow 2. Extrinsic Semiconductor

  • a doping process to alter its conductivity Doping – the ability to change the characteristics of a material; the process of adding impurities Dopants – added impurities **Two Types of Extrinsic Materials
  1. N-Type Semiconductor** ( cathode )
  • Negative; increase the no. of electrons Minority → hole Majority → electrons “Si and Ge have added pentavalent impurity” Materials with 5 valence electrons: (P-As-Bi-Sb)
  • Phosphorus (P)
  • Arsenic (As)
  • Bismuth (Bi)
  • Antimony (Sb) Donor Atoms – diffused impurities with 5 valence electrons 2. P-Type Semiconductor ( anode )
  • Positive; increase the no. of holes Minority → electrons Majority → hole “Si and Ge have added trivalent impurity” Materials with 3 valence electrons: (Al-B-In-Ga)
  • Aluminum (Al)
  • Boron (B)
  • Indium (In)
  • Gallium (Ga) Acceptor Atoms – diffused impurities with 3 valence electrons PN Junction – half of Si material is doped with a trivalent impurity and the other with a pentavalent impurity.

Solution: a. VDQ and IDQ ID=

E

R

10 V

0.5 kΩ = 20 mA VD= E = 10 V The intersection between the load line and the characteristic curve defines the Q - point as VDQ ≅ 0.78 V IDQ ≅ 18.5 mA b. VR VR= E-VDQ = 10 V - 0.78 V = **9.22 V


Series Diode Configuration Examples:**

1. For the series diode configuration of Fig. 2.13, determine VD, VR, and ID Solution: VD= 0.7 V VR= E-VD = 8 V - 0.7 V = 7.3 V ID= IR =

VR

R

7.3 V

2.2 kΩ ≅ 3.32 mA

2. For the series diode configuration of Fig. 2.13, determine VD, VR, and ID with the diode reversed. Solution: “Since the diode has been reversed the connection of the diode with the power source will be Reverse Bias which will result in an open circuit” So, VR= 0 V and ID= 0 A E-VD-VR = 0 VD= E-VR VD= 8 V - 0 V = 8 V

3. For the series diode configuration of Fig. 2.16 , determine VD, VR, and ID Solution: “Since the diode has been reversed the connection of the diode with the power source will be Reverse Bias which will result in an open circuit” So, VR= 0 V and ID= 0 A E-VD-VR = 0 VD= E-VR VD= 0.5 V - 0 V = 0.5 V 4. Determine VO and ID for the series circuit of Fig.

  1. Solution: VO= E-VK 1 - VK 2 = 12 V - 0.7 V - 1.8 V = 9.5 V ID= IR =

VR

R

VO

R

9.5 V

0.680 kΩ ≅ 13.97 mA

4. Determine ID, VD 2 , and VO for the circuit of Fig. 2.21. Solution: “The combination of a short circuit in series with an open circuit always results in an open circuit.” So,

Solution: a. VO= 10 kΩ^ (12 2 k^ Ω + 10V^ -^ 0.7 V kΩ^ - 0.3 V)≅ 9.17 V b. VO= 10 V

9. Determine VO and ID for the networks of Fig. 2.158. Solution: a. VTH= IR = (10 mA)(2.2 kΩ) = 22 V RTH= 2.2 kΩ ID=

22 V - 0.7 V

2.2 kΩ + 2.2 kΩ ≅ 4.84 mA VO= (4.84 mA)(2.2 kΩ) = 10.65 V b. ID= 20 V^ + 20 V 6.8 kΩ^ - 0.7 V≅ 5.78 mA VO - 0.7 V + 20 V = 0 VO = - 19.3 V

10. Determine VO 1 and VO 2 for the networks of Fig. 2.159. Solution: a. VO 1 = 12 V - 0.7 V = 11.3 V VO 2 = 1.2 V b. VO 1 = 0 V VO 2 = **0 V


Parallel and Series-Parallel Configurations Examples:** 1. Determine VO, I 1 , ID 1 , and ID 2 for the parallel diode configuration of Fig. 2.28. Solution: “The voltage across parallel elements is always the same.” VO= 0.7 V I 1 =

VR

R

E-VD

R

10 V - 0.7 V

0.33 kΩ ≅ 28.18 mA ID 1 = ID 2 =

I 1

28.18 mA 2 ≅ 14.09 Ma

2. Determine the voltage VO for the network below. Solution: VO= 12 V - 0. 3 V = 11. 7 V 3. Determine the currents I 1 , I 2 , and ID 2 for the network of Fig. 2.

Solution: I 1 =

VK 2

R 1

0.7 V

3.3 kΩ ≅ 0.212 mA E - VK 1 - VK 2 - V 2 = 0 → V 2 = E - VK 1 - VK 2 V 2 = 20 V - 0.7 V - 0.7 V = 18.6 V I 2 =

V 2

R 2

18.6 V

5.6 kΩ ≅ 3.32 mA ID 2 + I 1 = I 2 → ID 2 = I 2 - I 1 ID 2 = 3.32 mA - 0.212 mA ≅ 3.11 Ma

4. Determine VO and ID for the networks of Fig. 2.160. Solution: a. ID= IR = 12 V - 0.7 V 4.7 kΩ ≅^ 2.4 mA VO 1 = 12 V - 0.7 V = 11.3 V b. ID= IR = 12 V + 4 V 2.2 kΩ^ -^ 0.7 V≅ 10.59 mA VO 1 = 20 V - 0.7 V = 19.3 V 5. Determine VO and I for the networks of Fig. 2. Solution: a. I = 1 V 1 k^ -^ 0.7 VΩ ≅ 0.3 mA VO 1 = 1 V - 0.7 V = 0.3 V b. I = 16 V^ -^ 0.7 V 4.7 k^ -^ 0.7 V + 4 VΩ ≅ 3.96 mA VO 1 =16 V - 0.7 V - 0.7 V = 14.6 V 6. Determine VO 1 , VO 2 , and I for the network of Fig. 2.

I=

E-VD

R

10 V - 0.7 V

1 kΩ = 9.3 mA

2. Determine the output level for the positive logic AND gate of Fig. 2. Solution: VO= 0.7 V I=

E-VD

R

10 V - 0.7 V

1 kΩ = 9.3 mA