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EECS 40 Midterm 2 - UC Berkeley, Fall 1999, Exams of Microelectronic Circuits

A midterm exam for the eecs 40 course offered at the university of california, berkeley, department of electrical engineering and computer sciences, in the fall of 1999. The exam covers various topics related to electrical engineering, including circuit analysis and semiconductor devices. Students are required to solve problems related to node voltages in circuits, identifying components in layouts and cross-sections of cmos inverters, and analyzing the behavior of mosfet transistors.

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UNIVERSITY OF CALIFORNIA
College of Engineering
Department of Electrical Engineering
and Computer Sciences
Professor Oldham Fall 1999
EECS 40 — MIDTERM #2
10 November 1999
Name: ______________________________ Student ID: _________
Last, First
TA: Kusuma
Chang
Guidelines:
1. Closed book and notes except 1 page of formulas.
2. You may use a calculator.
3. Do not unstaple the exam.
4. Show all your work and reasoning on the exam in order to receive full or partial credit.
5. This exam contains 12 pages plus the cover page and 2 sheets of scratch paper included at the end of the
exam. You can remove these from the rest of the exam if you wish.
Problem Points
Possible You r
Score
120
220
320
420
520
Tot al 1 00
K10
3
=
m10
3
=
µ10 6
=
n10
9
=
p10
12
=
f10
15
=
pf3
pf4
pf5
pf8
pf9
pfa

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Download EECS 40 Midterm 2 - UC Berkeley, Fall 1999 and more Exams Microelectronic Circuits in PDF only on Docsity!

UNIVERSITY OF CALIFORNIA Department of Electrical EngineeringCollege of Engineering and Computer Sciences

Professor Oldham Fall 1999

EECS 40 — MIDTERM

10 November 1999

Name: ______________________________ Student ID: _________

Last, First

TA: o Kusuma

o Chang

Guidelines:

1. Closed book and notes except 1 page of formulas.

2. You may use a calculator.

3. Do not unstaple the exam.

4. Show all your work and reasoning on the exam in order to receive full or partial credit.

5. This exam contains 12 pages plus the cover page and 2 sheets of scratch paper included at the end of the

exam. You can remove these from the rest of the exam if you wish.

Problem

Points Possible

Your Score

Total 100

K = 10 3

m = 10 –^3 μ = 10 –^6 n = 10 –^9 p = 10 –^12 f = 10 –^15

Problem 1 (20 points)

What is the value of the unknown node voltage in each of the following circuits? Assume diodes are perfect rec-

tifiers.

(a)

(b)

(c)

(d)

(e)

(f) A cross-section for a CMOS chip is shown on the facing page. Some node voltages are indicated. Please tell

us what the values are for the node voltages at nodes U, W, R, S.

5V 6V

10V 9V

X

100K V

X = ____________________

100K

Y 12V

V (^) Y = ____________________

100K

Z 25V V (^) Z =____________________

100K

A

B

−+

V AB = ____________________

77V

100K

C

V CD = ____________________

D

77V

V W = _______________

V U = _______________

V R = _______________

V S =_______________

Problem 2 (20 points)

Shown on the opposite page is the layout and two cross-sections through a CMOS inverter. A list of components

follows. You are to indicate, by labelling, the location of that feature on the figure. The first question is used as an

example.

2.1 Layout

(1) A contact to polysilicon [EXAMPLE]

(2) gate of NMOS transistor

(3) the W dimension of the PMOS transistor

(4) contact to p-type substrate

(5) metal contact to PMOS gate

(6) spacing from n+ source gain areas to well mask

(7) input electrode

(8) output electrode

2.3 Masks

A possible list of masks for this process follows. You are to order the masks by simply filling in the mask num-

ber. It is possible that one or more masks is missing. If so, you must fill out a new mask row for each missing

mask.

2.4 Gate delay

For this layout, what do we expect for the relationship between gate delay for output rising (t pLH ), and output

falling (t pHL )? Answer by putting in the correct symbol in the box (=, >, or <).

MASK# NAME FUNCTION

Poly Define polysilicon areas N-select Define n+ implant areas P-select Define p+ implant areas Oxide Define areas for gate oxide Metal Define metal conductor pattern

Why? __________________________________________________________________________

t pLH tpHL

Put symbol here

2.2 Cross-sections

(a) well region

(b) field oxide

(c) NMOS gate oxide

(d) metal contact to PMOS source or drain

(e) poly on field oxide

(f) metal over field oxide

(g) contact to NMOS source or drain

(h) oxide over polysilicon gate

Fill in mask

here

Prob. 2 – Schematic for CMOS Inverter

Problem 3 Answer Sheet

(d)

1

2

3

4

5

time

V OUT ( V)

Problem 4 (20 points)

A CMOS inverter drives an off-chip capacitance load, as shown below. All you know about the MOS transistors

is shown in the graphs. (DO NOT ASK for more information!)

(a) Draw the circuit model (in the box provided on opposite page) for the circuit (replacing transistors with

appropriate simpler elements, such as voltage sources, current sources, resistors, capacitors, inductors)

when. No numerical values are required in part (a).

(b) Suppose suddenly switches to 0V at. Draw the new circuit model in the box provided (again

with simpler elements). Show both the general form and the numerical values for all parameters.

(c) Sketch the form of versus time for to on the axes provided. (No numbers needed.)

(d) What is the time delay for to go to (in n sec)?

(e) At what time does equal 1 V (in n sec)?

V DD = 3 V

C (^) LOAD = 5 pF

V IN V^ OUT

1

3 2

1 2 3

  • I (^) Dp (mA)
    • VGSp =3V
    • VGSp =2V
  • V (^) GSp= 1V
  • VDSp

1

3 2

1 2 3

IDn (mA)

  • V (^) GS = 3V
  • V (^) GS= 2V
  • VGS =1V VDSn

V IN = 3V

V (^) IN t = 0 +

V (^) OUT t = 0 + t →∞

V OUT V DD ⁄ 2

∆t = ____________________nsec

V OUT

t =___________________nsec

Problem 5 (20 points)

(a) You open up your Robot Kit and find the following circuit. You suspect it is a linear voltage amplifier. You

know the differential amplifier has very high internal gain.

(a.1) Is it a linear amplifier?

(a.2) If so, what is the voltage gain? [If not, ignore (a.2).]

(a.3) If not, why not?

(b) You also find the following circuit. Again you suspect a linear amplifier. You know the differential ampli-

fier has very high internal gain.

(b.1) Is it a linear amplifier?

(b.2) If so, what is the voltage gain? [If not, ignore (b.2).]

(b.3) If not, why not?

(c) Carefully sketch the curve of versus for circuit (a) on the graph axes provided for

(d) Carefully sketch the curve of versus for circuit (b) on the graph axes provided for

V (^) o ------V (^) i-

V (^) i

10K

+Rail = +5.2V −Rail = 0 V

speaker

190K

33.3KΩ

Linear amplifier? ______________________

A (^) V VV^ o i

≡ -------= ____________________

V (^) o (Yes or No)

+ − 0 to +250 mVsignal

If not, why not? ______________________

+Rail = +5.2V −Rail = 0 V

signal

10K

0.2V

Vo

Linear amplifier?______________________

A (^) V VV^ o i

≡ ------- =____________________

500K Vi

0 to +250 mV (Yes or No)

If not, why not?______________________

V OUT V IN

0 ≤ V (^) i ≤250mV

V OUT V IN

0 ≤ V (^) i ≤250mV

Prob. 5. Answer Sheet

(c)

(d)

50 100 150 200

1

2

3

4

5

6

V (^) IN ( mV)

V OUT ( V)

250

50 100 150 200

1

2

3

4

5

6

V (^) IN ( mV)

V OUT ( V)

250